30 0.3 20 0.3 |? 3 . 2 0 . 1 5 2.4 0.2 2.2 0.2 1.0 0.1 10 0.2 7.5 0.2 7.5 0.2 4.0 0.2 5.5 0.2 3.7 0.2 4.7 0.25 0.8 0.15 11.1 0.2 17.7 0.5 2.8 0.2 features rating to 1000v prv s u r g e o v e r l o a d r a t i ng t o 20 0 a m pe r e s p e ak ideal for printed circuit board reliable low cost construction utilizing molded plastic technique results in inexpensive product maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. rbv 2502 rbv 2504 rbv 2506 rbv 2508 rbv 2510 units maximum recurrent peak reverse voltage v r r m 2 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v max imum rms v oltage v rms 140 280 420 560 700 v max imum dc bloc king v oltage v dc 2 0 0 4 0 0 6 0 0 8 0 0 1 0 00 v maximum average forw ard output current @t a =25 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load maximum instantaneous forw ard voltage a t 1 2.5 a v f v maximum reverse current @t a =25 a at rated dc blocking voltage @t a =100 ma typical junction capacitance per element c j pf typical thermal resistance r jc /w operating junction temperature range t j storage temperature range t stg RBV25005 - - - rbv2510 rbv 25005 rbv 2501 50 100 1.1 2.dev ice mounted on 300mm x 300mm x 1.6mm cu plate heatsink. 0.2 a 1 0 . 0 i f(av) 25.0 a silicon bridge rect ifiers 300 i fsm kbj 100 70 voltage range: 50 --- 1000 v current: 25.0 a 35 5 0 lead solderable per mil-std-202 method 208 polarity:symbols molded on body mounting pos ition: any mechancal data weight:0.23 ounces, 6.6 grams notes:1.measured at 1.0mh z and applied rev erse v oltage of 4.0v dc - 55 ---- + 150 - 55 ---- + 150 i r 85 0 . 6 dimensions in millimeters diode semiconductor korea www.diode.kr
.4 .6 .8 1.0 1.2 .01 0.1 1.0 1.6 .2 10 1.4 100 .1 .2 .4 1.0 2 4 10 20 40 1 0 1 20 40 100 120 140 160 200 t j =25 f=1m hz 50 0 10 20 050100 30 40 150 50 0 1100 375 10 150 300 8.3ms single half sine wave t j =150 amperes average forward output current, amperes fig.3 -- typical forward characteristic fig.4 -- typical junction capacitance amperes RBV25005 --- rbv2510 number of cycles at 60h z ambient temperature, fi g.2 -- forward derating curve fi g. 1 -- peak forward surge current junction capacitance,pf instantaneous forward current, peak forward surge current, instantaneous forward voltage, volts reverse voltage,volts www.diode.kr diode semiconductor korea
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